Methods of Forming a Plurality of Capacitors

ABSTRACT

A method of forming a plurality of capacitors includes an insulative material received over a capacitor array area and a circuitry area. The array area comprises a plurality of capacitor electrode openings within the insulative material received over individual capacitor storage node locations. The intervening area comprises a trench. Conductive metal nitride-comprising material is formed within the openings and against a sidewall portion of the trench to less than completely fill the trench. Inner sidewalls of the conductive material within the trench are annealed in a nitrogen-comprising atmosphere. The insulative material within the array area is etched with a liquid etching solution effective to expose outer sidewall portions of the conductive material within the array area. The conductive material within the array area is incorporated into a plurality of capacitors.

TECHNICAL FIELD

Embodiments herein relate to methods of forming a plurality ofcapacitors.

BACKGROUND

Capacitors are one type of component used in the fabrication ofintegrated circuits. One manner of fabricating capacitors is toinitially form an insulative material (i.e., silicon dioxide doped withone or both of phosphorus and boron) within which a capacitor storagenode electrode is formed. An array of openings for individual capacitorsis fabricated in such insulative material, for example by etching. It isoften desirable to etch away most if not all of the insulative materialafter individual capacitor electrodes have been formed within theopenings therein. Such enables outer sidewall surfaces of the capacitorelectrodes to provide increased area and thereby increased capacitancefor the capacitors being formed. However, the capacitor electrodesformed in deep openings are often much taller than they are wide. Thiscan lead to toppling of the capacitor electrodes either during the etchto expose the outer sidewalls surfaces, during transport of thesubstrate, and/or during deposition of the capacitor dielectric layer orthe outer capacitor electrode layer. U.S. Pat. No. 6,667,502 teaches theprovision of a brace or retaining structure intended to alleviate suchtoppling.

One manner of fabricating capacitors forms an array of capacitors withina capacitor array area. Control or other circuitry area is displacedfrom the capacitor array area, with the substrate including anintervening area between the capacitor array area and the control orother circuitry area. In some instances, a trench is formed in theintervening area between the capacitor array area and the othercircuitry area. Such trench can be formed commensurate with thefabrication of the openings within the capacitor array area within whichthe isolated capacitor electrodes will be received.

When etching the material within which the capacitor electrodes arereceived to expose outer sidewall surfaces thereof, it may be desiredthat none of such material within the other circuitry area be etched.One prior art method restricts such by masking the peripheral circuitryarea. Specifically, a silicon nitride layer is formed over thepredominately insulative material within which the capacitor electrodesare formed. The conductive material deposited to form the capacitorelectrodes within the electrode openings also deposits and lines thetrench between the capacitor array area and the peripheral circuitryarea. Example conductive materials include conductive metal nitrides,such as titanium nitride. The titanium nitride is polished back at leastto the silicon nitride layer, thereby forming isolated container-shapedstructures within individual capacitor electrode openings in the arrayarea and within the trench. Accordingly, the sidewalls and bottom of thetrench are covered or masked with titanium nitride, whereas the top orelevationally outermost surface of the peripheral or other circuitryarea is covered with silicon nitride.

Etch access openings are then formed at spaced intervals in the siliconnitride within the capacitor array area to expose the insulativematerial within which the capacitor electrodes were formed.Elevationally outermost surfaces of the peripheral circuitry area arekept entirely masked with the silicon nitride layer. When the insulativematerial comprises phosphorus and/or boron doped silicon dioxide, anaqueous etching chemistry utilized to etch such highly selectively totitanium nitride and to silicon nitride is an aqueous HF solution. Suchdesirably results in exposure of the outer sidewalls of the individualcapacitor electrodes while the peripheral insulative material remainsmasked from such etching by the overlying silicon nitride layer and fromthe titanium nitride within the peripheral trench.

Unfortunately, the titanium nitride may be formed in a manner whichproduces cracks or pinholes that extend laterally therethrough. This isnot problematic within the capacitor array area as it is desired thatany insulative material be removed from both the inner and outer lateralsidewalls of the capacitor electrodes. Passage of liquid etchant throughany cracks or pinholes within the array area does not defeat thispurpose. However, cracks or pinholes in the titanium nitride layerprotecting the lateral sidewalls of the peripheral circuitry insulativematerial can be problematic. Specifically, etchant seeping therethroughcan cause etching which forms voids or pockets laterally within theperipheral circuitry insulative material. These can later create fatalcontact-to-contact shorts in the peripheral circuitry area whenconductive vertical contacts are formed therein.

One solution to such problem is to deposit a very thin polysilicon layerto line internal portions of the capacitor electrodes and against thetitanium nitride layer which laterally covers the insulative material ofthe peripheral circuitry area. Polysilicon is highly resistant to etchby HF. Such will shield any pinholes, thereby precluding HF or otheretchants from seeping therethrough and undesirably etching theperipheral circuitry area insulative material.

Polysilicon is undesired subsequently, and is therefore removed.Accordingly, after etching back the insulative material to expose theouter sidewalls of the capacitor electrodes, a dedicated wet etch isconducted to highly selectively remove the polysilicon relative toundoped silicon dioxide, the titanium nitride, and the silicon nitride.Prior to this, a separate dedicated wet etch is conducted to remove anundesired native oxide which forms over the polysilicon.

While some embodiments disclosed herein were motivated in addressing theabove identified issues, the disclosure is in no way so limited.

BRIEF DESCRIPTION OF THE DRAWINGS

Example embodiments of the invention are described below with referenceto the following accompanying drawings.

FIG. 1 is a diagrammatic cross section of a substrate fragment inprocess in accordance with an embodiment of the invention.

FIG. 2 is a diagrammatic top plan view of a larger scale portion of theFIG. 1 substrate.

FIG. 3 is a view of the FIG. 1 substrate at a processing step subsequentto that shown by FIG. 1, and taken through line 3-3 in FIG. 4.

FIG. 4 is a diagrammatic top plan view of the FIG. 3 substrate fragment.

FIG. 5 is a view of the FIG. 3 substrate at a processing step subsequentto that shown by FIG. 3.

FIG. 6 is a view of the FIG. 5 substrate at a processing step subsequentto that shown by FIG. 5.

FIG. 7 is a view of the FIG. 6 substrate at a processing step subsequentto that shown by FIG. 6.

FIG. 8 is a view of the FIG. 7 substrate at a processing step subsequentto that shown by FIG. 7.

FIG. 9 is an enlarged view of a portion of the FIG. 8 substratefragment.

FIG. 10 is a view of an alternate embodiment substrate fragment to thatdepicted by FIG. 9.

FIG. 11 is a view of the FIG. 8 substrate at a processing stepsubsequent to that shown by FIG. 9, and taken through line 11-11 in FIG.12.

FIG. 12 is a diagrammatic top plan view of the FIG. 11 substratefragment.

FIG. 13 is a view of the FIG. 11 substrate at a processing stepsubsequent to that shown by FIG. 11.

FIG. 14 is a view of the FIG. 13 substrate at a processing stepsubsequent to that shown by FIG. 13.

FIG. 15 is a diagrammatic representation of DRAM circuitry.

DETAILED DESCRIPTION OF EXAMPLE EMBODIMENTS

Example methods of forming pluralities of capacitors are described withreference to FIGS. 1-15. Referring initially to FIGS. 1 and 2, asubstrate, in one embodiment a semiconductor substrate, is indicatedgenerally with reference numeral 10. In the context of this document,the term “semiconductor substrate” or “semiconductive substrate” isdefined to mean any construction comprising semiconductive material,including, but not limited to, bulk semiconductive materials such as asemiconductive wafer (either alone or in assemblies comprising othermaterials thereon), and semiconductive material layers (either alone orin assemblies comprising other materials). The term “substrate” refersto any supporting structure, including, but not limited to, thesemiconductive substrates described above. Accordingly, and by way ofexample only, FIG. 1 might comprise a bulk semiconductor material (notshown), for example bulk monocrystalline, and/or comprisesemiconductor-on-insulator layers.

Substrate 10 may be considered as comprising a capacitor array area 25,a circuitry area 75 other than capacitor array area 25, and anintervening area 50 between capacitor array area 25 and circuitry area75. In the depicted embodiment, intervening area 50 completely surroundsand encircles capacitor array area 25 (FIG. 2), and circuitry area 75comprises a peripheral circuitry area to that of capacitor array area25. Alternate constructions are contemplated, of course, for examplewhereby neither intervening area 50 nor circuitry area 75 completely orpartially encircles a capacitor array area 25.

FIG. 1 depicts an insulative material 12 having electrically conductivestorage node pillars 14 formed therethrough. Materials 12 and 14 may befabricated over some suitable underlying material, for example bulkmonocrystalline and/or underlying circuitry. An example insulativematerial 12 includes doped and undoped silicon dioxides, for examplesilicon dioxide deposited by the decomposition oftetraethylorthosilicate (TEOS) and/or borophosphosilicate glass (BPSG),and/or silicon nitride. Alternately by way of example only, material 12might comprise anisotropically etched insulative sidewall spacers, forexample formed about transistor gate lines (not shown). An examplematerial 14 is conductively doped polysilicon. Conductive material 14can be considered as comprising or defining a plurality of capacitorstorage node locations 15, 16, 17, and 18 on substrate 10. Storage nodelocations 15, 16, 17, and 18 are examples only, and regardless, may beconductive at this point in the process or made conductive subsequently.

An example layer 22 has been formed over material 12 and capacitorstorage node locations 15, 16, 17, and 18. An example material for layer22 comprises silicon nitride and/or undoped silicon dioxide deposited toan example thickness range of from about 100 Angstroms to about 2,000Angstroms. Layer 22 might be included to provide an etch stop or otherfunction.

Some insulative material 24 is received over capacitor array area 25,circuitry area 75, and also in the depicted embodiment over interveningarea 50. Such might be homogeneous or comprise multiple differentcompositions and/or layers. An example material is silicon dioxidecomprising at least one of phosphorus and boron, for example BPSG,borosilicate glass (BSG), and/or phosphosilicate glass (PSG). An examplethickness range for material 24 is from about 5,000 Angstroms to about10 microns, with 2 microns being a specific example. Thinner and greaterthicknesses may also be used.

A silicon nitride-comprising layer 26 is received over insulativematerial 24. Such may comprise, consist essentially of, or consist ofsilicon nitride. An example thickness range is from about 200 Angstromsto about 5,000 Angstroms. Some or all of layer 26 might be removed, orsome or all of layer 26 might remain over the substrate as part offinished circuitry construction incorporating a plurality of capacitorsbeing fabricated. Material other than silicon nitride might also beutilized, and not all embodiments necessarily require a siliconnitride-comprising or masking layer 26.

Referring to FIGS. 3 and 4, a plurality of capacitor electrode openings28 have been formed within silicon nitride-comprising layer 26,insulative material 24, and layer 22 over individual capacitor storagenode locations 15, 16, 17, and 18. Further, a trench 30 has been formedin intervening area 50 within materials 26, 24, and 22. In one exampleembodiment, trench 30 completely surrounds capacitor area 25. An exampletechnique for forming capacitor electrode openings 28 and trench 30comprises photolithographic patterning and selective anisotropic dryetching to produce the example FIGS. 3 and 4 construction. An exampleminimum width of trench opening 30 is from about 200 Angstroms to about5,000 Angstroms, while an example minimum width for capacitor electrodeopenings 28 is from about 200 Angstroms to about 5,000 Angstroms. Forpurposes of the continuing discussion, trench 30 may be considered ascomprising sidewall portions 31 and 33, and capacitor electrode openings28 may be considered as having sidewall portions 27.

Referring to FIG. 5, and in but one embodiment, elemental titanium 29has been deposited in a highly selective manner largely over storagenode locations 15, 16, 17, 18 and atop silicon nitride layer 26. Anexample manner of depositing titanium 29 is by plasma enhanced chemicalvapor deposition using TiCl₄ and H₂. Some of titanium 29 may alsodeposit into openings 28 and 30 adjacent the tops thereof, as shown.Regardless, an example thickness for layer 29 over material 26 andmaterial 14 is from about 100 Angstroms to about 200 Angstroms.

Referring to FIG. 6, a conductive metal nitride-comprising material 32has been formed within capacitor electrode openings 28, and withintrench 30 at least against a portion of sidewall portion 31 to less thancompletely fill trench 30. In the depicted example embodiment,conductive metal nitride-comprising material 32 also less than fillscapacitor electrode openings 28, and lines sidewalls portions 27 ofcapacitor electrode openings 28. Alternately, conductive metalnitride-comprising material 32 might fill capacitor electrode openings28. Conductive metal nitride-comprising material 32 can be considered ashaving inner sidewalls 40 and outer sidewalls 41 within capacitorelectrode openings 28 within capacitor array area 25, and innersidewalls 38 and outer sidewalls 39 within trench 30. Example conductivematerials 32 comprise one or both of titanium nitride and tantalumnitride deposited to an example thickness from about 20 Angstroms toabout 1,000 Angstroms.

In conjunction with a problem which motivated this disclosure,conductive metal nitride-comprising material 32 within trench 30comprises some opening 34 extending laterally therethrough to insulativematerial 24 received over circuitry area 75. Such might be in the formof one or more pinholes, through-extending cracks, etc., with an exampleplurality of such openings 34 being indicated by way of example only.Example such laterally extending cracks/openings 34 are also shownwithin conductive metal nitride-comprising material 32 within capacitorelectrode openings 28. Further, example opening/cracks 35 are shown inconductive metal nitride-comprising material 32 at the bases of openings28 and 30. Regardless, some embodiments of the invention do howevercontemplate fewer or no such openings 34/35 being formed.

Referring to FIG. 7, conductive layers 32 and 29 have removed from oversilicon nitride-comprising layer 26 at least to an outer surfacethereof, thereby forming isolated/separate conductive capacitorelectrodes within capacitor electrode openings 28 and an isolationstructure within trench 30. Example manners of removal include chemicalmechanical polishing and resist etch back. Any other manner of formingseparate conductive capacitor electrodes within openings 28 could alsoof course be used, including by way of example only usingphotolithographic masking and etch.

Referring to FIGS. 8 and 9, inner sidewalls 38 of conductive metalnitride-comprising material 32 within trench 30 have been annealed in anitrogen-comprising atmosphere. In the context of this document, an“atmosphere” is that volume of non-solid space over the substrate towhich the substrate is exposed. In the context of this document, a“nitrogen-comprising atmosphere” or an “atmosphere comprising nitrogen”is an atmosphere that contains at least some non-solid nitrogenatom-containing material. By way of examples only, examples include NH₃,N₂, and N₂H₄, including any combinations thereof. In one embodiment,separate capacitor electrodes of material 32 within capacitor electrodeopenings 28 have also been annealed while annealing inner sidewalls 38of material 32 within trench 30. In one embodiment, thenitrogen-comprising atmosphere directly contacts against the conductivemetal nitride-comprising material during the annealing (i.e., such isnot prevented from direct contact by a material through which theatmosphere cannot diffuse). In one embodiment, the annealing comprisesincorporating some of the nitrogen in the nitrogen-comprising atmosphereinto the conductive metal nitride-comprising material during theannealing. Example embodiments also include providing the atmosphere inany one or combinations of gas, plasma, or liquid during the annealing.In one embodiment, the nitrogen-comprising atmosphere comprises N₂. Inone embodiment, the nitrogen-comprising atmosphere comprises N₂ and atemperature of at least 700° C., and perhaps at least 800° C. In oneembodiment, the nitrogen-comprising atmosphere comprises plasma (i.e.,generated one or both of externally of the chamber in which thesubstrate is received and internally within such chamber).

In one embodiment, the nitrogen-comprising atmosphere is substantiallydevoid of non-solid silicon-comprising material. In the context of thisdocument, a “silicon-comprising material” is any material that containssilicon atoms. In the context of this document, “substantially devoid ofnon-solid silicon-comprising material” defines a quantity of non-solidsilicon-comprising material from zero up to any amount that results inno detectable deposition of any material containing silicon onto thesubstrate during the annealing.

In one embodiment, the nitrogen-comprising atmosphere is substantiallydevoid of non-solid oxygen-comprising material. In the context of thisdocument, an “oxygen-comprising material” is any material that containsoxygen atoms. In the context of this document, “substantially devoid ofnon-solid oxygen-comprising material” defines a quantity of non-solidoxygen-comprising material from zero up to any amount that results in nodetectable deposition of any material containing oxygen onto thesubstrate during the annealing.

By way of examples only, embodiments for the nitrogen-comprisingatmosphere annealing include temperature ranges from about 400° to about800°, no greater than 850° C., from about 550° C. to about 650° C. (with600° C. being a specific example), and pressure which is subatmosphericfor example ranging from about 1 Torr to about 10 Torr and from about 2Torr to about 5 Torr. Example flow of one of more nitrogen-comprisinggases to a chamber within which the substrate is received during theannealing is from about 1,000 seem to about 5,000 sccm. An example timerange for the annealing is from about 5 minutes to 60 minutes. Ofcourse, values outside these ranges and limits are also contemplated.

In one embodiment, the annealing comprises rapid thermal processing(RTP) with a temperature ramp rate of at least 75° C./second. Prior artprocessing of a substrate comprising an array of capacitors within acapacitor array area includes a threshold voltage adjust RTP anneal forfield effect devices at a temperature ramp rate of at least 75°C./second to a temperature of about 710° C. for a total period of timeof about 20 seconds. A nitrogen-comprising atmosphere anneal asdisclosed herein may be combined with, or effectively also includes, athreshold voltage adjust RTP anneal for field effect devices.

In one embodiment, the annealing within a nitrogen-comprising atmosphereis effective to close-off a laterally extending opening with conductivemetal nitride-comprising material. FIGS. 8-9 depict one example suchembodiment. Such shows conductive metal nitride-comprising layer 32within trench 30 as comprising a thickness or length “L” (FIG. 9)through layer 32 along which opening/crack 34 extends. In one embodimentand as shown in FIGS. 8 and 9, the annealing has been effective to onlypartially extend conductive metal nitride-comprising material within thedepicted opening 34 along an entirety of opening/crack length L. Anotherexample embodiment substrate fragment 10 a is shown in FIG. 10. Likenumerals form the first-described embodiment are utilized whereappropriate, with differences being indicated with the suffix “a”. InFIG. 10, the annealing has been effective to fully extend conductivemetal nitride-comprising material within the depicted opening 34 alongthe entirety of opening/crack length L.

Referring to FIGS. 11 and 12, etch openings 45 have been formed throughfirst silicon nitride-comprising layer 26 within capacitor array area 25effective to expose insulative material 24 within capacitor array area25 while leaving the elevationally outermost surfaces of insulativematerial 24 within circuitry area 75 completely covered with firstsilicon nitride-comprising layer 26. Such provide access for etchant toget to and etch material 24 within capacitor array area 25. In the abovedescribed embodiment, the annealing in a nitrogen-comprising atmospherewas conducted prior to forming etch openings 45. In one embodiment, theannealing in a nitrogen-comprising atmosphere is conducted after formingetch openings 45.

Referring to FIG. 13, insulative material 24 within capacitor array area25 has been etched with a liquid etching solution effective to exposeouter sidewall portions of outer sidewalls 41 of conductive metalnitride-comprising material 32 within capacitor array area 25. Anexample liquid etchant solution is aqueous, and regardless for examplecomprising HF. One example solution comprises from 5:1 to 20:1 water toHF by volume, wherein said HF is a 49 weight percent solution of HF inwater. An example etching temperature is room ambient, with an exampleetching pressure also being room ambient. However, temperatures andpressures below and above room ambient are also contemplated. By way ofexample only, a 10:1 by volume water to HF solution per the above can beused to etch PSG at a rate of approximately from 5,000 Angstroms/minuteto 15,000 Angstroms/minute, while etching a layer consisting essentiallyof silicon nitride at a rate of from 20 Angstroms/minute to 80Angstroms/minute. By way of example only, additional exampleHF-containing solutions might contain any one or combination of HNO₃,acetic acid, NH₄F, and proprionic acid.

Conductive metal nitride-comprising material 32 within capacitor arrayarea 25 is incorporated into a plurality of capacitors. For example,FIG. 14 depicts the deposition of a capacitor dielectric layer 60. Byway of example only, an example material is a silicon dioxide, siliconnitride, silicon dioxide composite, or any suitable high k dielectric,whether existing or yet-to-be developed. Example high k dielectricsinclude Ta₂O₅ and barium strontium titanate.

An outer capacitor electrode layer 70 has been deposited over capacitordielectric layer 60, thereby defining capacitors 81, 82, 83, and 84.Such are depicted as comprising a common cell capacitor plate to all ofthe depicted capacitors, for example as might be utilized in DRAM orother circuitry. For example and by way of example only, FIG. 15 depictsan example DRAM cell incorporating capacitor 81. Such comprises anexample transistor gate wordline 87 having insulative sidewall spacers,an insulative cap and a conductive region under the cap such as asilicide, a conductive polysilicon region under the silicide, and a gatedielectric region under the polysilicon. Source/drain regions 80 areshown formed within semiconductive material operatively proximatewordline 87. One of such electrically connects with capacitor 81, andanother such electrically connects with a bitline 85.

The above-described embodiment depicts at least some of silicon nitridemasking layer 26 remaining as part of the finished circuitryconstruction. Alternate bracing structures might be utilized.Alternately, no bracing might be utilized during processing or in thefinal construction.

Conducting an anneal in an NH₃-comprising atmosphere of the substrate ofFIG. 6 (i.e., prior to forming separate capacitor electrodes within theopenings) where material 32 was TiN increased resultingdefects/decreased resulting yield in comparison with substratesidentically processed but for an NH₃-comprising atmosphere anneal of theFIG. 6 substrate. It is theorized that such an anneal may be increasingstress within the TiN layer prior to separation to formindividual/separated capacitor electrodes. In light thereof,surprisingly conducting an anneal in accordance with embodiments of theinvention disclosed herein (after forming separate capacitor electrodes)may reduce resulting defects/increase yield in comparison withsubstrates otherwise identically processed but for an anneal inaccordance with embodiments of the invention disclosed herein, andregardless of whether a nitrogen-comprising atmosphere anneal isconducted of the FIG. 6 substrate. Conducting an anneal in accordancewith embodiments of the invention disclosed herein after formation ofseparate capacitor electrodes may be relaxing or reducing stress withinthe conductive metal nitride-comprising material without necessarilycausing reflow of such material.

In compliance with the statute, the subject matter disclosed herein hasbeen described in language more or less specific as to structural andmethodical features. It is to be understood, however, that the claimsare not limited to the specific features shown and described, since themeans herein disclosed comprise example embodiments. The claims are thusto be afforded full scope as literally worded, and to be appropriatelyinterpreted in accordance with the doctrine of equivalents.

1. A method of forming a plurality of capacitors, comprising: providinga substrate comprising a capacitor array area and another circuitry areaother than the capacitor array area, an insulative material receivedover the capacitor array area and the other circuitry area, thecapacitor array area comprising a plurality of capacitor electrodeopenings within the insulative material received over individualcapacitor storage node locations, the other circuitry area comprising asidewall of the insulative material; forming conductive metalnitride-comprising material within the capacitor electrode openingswithin the capacitor array area and against at least a portion of thetrench to less than completely fill the trench said sidewall ofinsulative material; annealing the conductive metal nitride-comprisingmaterial received against said portion of said sidewall of insulativematerial in a nitrogen-comprising atmosphere, the nitrogen-comprisingatmosphere being devoid of non-solid silicon-comprising material; afterthe annealing, etching the insulative material within the capacitorarray area to expose outer sidewall portions of the conductive metalnitride-comprising material within the capacitor array area; and afterthe etching, incorporating the conductive metal nitride-comprisingmaterial within the capacitor array into a plurality of capacitors thatcomprise the conductive metal nitride-comprising material within thecapacitor array.
 2. The method of claim 1 wherein thenitrogen-comprising atmosphere is devoid of non-solid oxygen-comprisingmaterial. 3-12. (canceled)
 13. The method of claim 1 wherein theconductive metal nitride-comprising material within the trench comprisesan opening extending laterally therethrough to the insulative materialreceived over the other circuitry area prior to the annealing, theannealing being effective to close-off the laterally extending opening.14-15. (canceled)
 16. The method of claim 1 wherein the annealingcomprises contacting the nitrogen-comprising atmosphere directly againstthe conductive metal nitride-comprising material during the annealing.17. The method of claim 1 wherein the annealing comprises incorporatingsome of the nitrogen in the nitrogen-comprising atmosphere into theconductive metal nitride-comprising material during the annealing.
 18. Amethod of forming a plurality of capacitors, comprising: providing asubstrate comprising a capacitor array area and another circuitry areaother than the capacitor array area, an insulative material receivedover the capacitor array area and the other circuitry area, thecapacitor array area comprising a plurality of capacitor electrodeopenings within the insulative material received over individualcapacitor storage node locations, the other circuitry area comprising asidewall of the insulative material; forming conductive metalnitride-comprising material within the capacitor electrode openingswithin the capacitor array area and against at least a portion of saidsidewall of insulative material; annealing the conductive metalnitride-comprising material received against said portion of saidsidewall of insulative material in a plasma atmosphere comprisingnitrogen; after the annealing, etching the insulative material withinthe capacitor array area to expose outer sidewall portions of theconductive metal nitride-comprising material within the capacitor arrayarea; and after the etching, incorporating the conductive metalnitride-comprising material within the capacitor array into a pluralityof capacitors that comprise the conductive metal nitride-comprisingmaterial within the capacitor array. 19-24. (canceled)
 25. The method ofclaim 18 wherein the annealing comprises incorporating some of thenitrogen in the plasma atmosphere comprising nitrogen into theconductive metal nitride-comprising material during the annealing.
 26. Amethod of forming a plurality of capacitors, comprising: providing asubstrate comprising a capacitor array area and another circuitry areaother than the capacitor array area, an insulative material receivedover the capacitor array area and the other circuitry area, thecapacitor array area comprising a plurality of capacitor electrodeopenings within the insulative material received over individualcapacitor storage node locations, the other circuitry area comprising asidewall of the insulative material; forming conductive metalnitride-comprising material within the capacitor electrode openingswithin the capacitor array area and against at least a portion of saidsidewall of insulative material; annealing the conductive metalnitride-comprising material received against said portion of saidsidewall of insulative material in an N₂-comprising atmosphere; afterthe annealing, etching the insulative material within the capacitorarray area to expose outer sidewall portions of the conductive metalnitride-comprising material within the capacitor array area; and afterthe etching, incorporating the conductive metal nitride-comprisingmaterial within the capacitor array into a plurality of capacitors thatcomprise the conductive metal nitride-comprising material within thecapacitor array. 27-29. (canceled)
 30. The method of claim 26 whereinthe conductive metal nitride-comprising material comprises at least oneof titanium nitride and tantalum nitride.
 31. The method of claim 26wherein the conductive metal nitride-comprising material receivedagainst said portion of said sidewall of insulative material comprisesan opening extending laterally therethrough to the insulative materialreceived over the other circuitry area prior to the annealing, theannealing being effective to close-off the laterally extending opening.32. A method of forming a plurality of capacitors, comprising: providinga substrate comprising a capacitor array area and another circuitry areaother than the capacitor array area, an insulative material receivedover the capacitor array area and the other circuitry area, thecapacitor array area comprising a plurality of capacitor electrodeopenings within the insulative material received over individualcapacitor storage node locations, the other circuitry area comprising asidewall of the insulative material; forming conductive metalnitride-comprising material within the capacitor electrode openingswithin the capacitor array area and against at least a portion of saidsidewall of insulative material, the conductive metal nitride-comprisingmaterial received against said portion of said sidewall of insulativematerial comprising an opening extending laterally therethrough to theinsulative material received over the other circuitry area; annealingthe conductive metal nitride-comprising material received against saidportion of said sidewall of insulative material in a nitrogen-comprisingatmosphere to close-off the laterally extending opening with conductivemetal nitride-comprising material; after the annealing, etching theinsulative material within the capacitor array area to expose outersidewall portions of the conductive metal nitride-comprising materialwithin the capacitor array area; and after the etching, incorporatingthe conductive metal nitride-comprising material within the capacitorarray into a plurality of capacitors that comprise the conductive metalnitride-comprising material within the capacitor array.
 33. The methodof claim 32 wherein the laterally extending opening has a length throughthe conductive metal nitride-comprising material, the annealing beeneffective to only partially extend conductive metal nitride-comprisingmaterial along an entirety of the length.
 34. The method of claim 32wherein the laterally extending opening has a length through theconductive metal nitride-comprising material, the annealing beeneffective to fully extend conductive metal nitride-comprising materialalong an entirety of the length.
 35. The method of claim 32 wherein theannealing comprises contacting the nitrogen-comprising atmospheredirectly against the conductive metal nitride-comprising material duringthe annealing. 36-48. (canceled)
 49. The method of claim 13 wherein thelaterally extending opening has a length through the conductive metalnitride-comprising material, the annealing been effective to onlypartially extend conductive metal nitride-comprising material along anentirety of the length.
 50. The method of claim 13 wherein the laterallyextending opening has a length through the conductive metalnitride-comprising material, the annealing been effective to fullyextend conductive metal nitride-comprising material along an entirety ofthe length.
 51. The method of claim 22 wherein the laterally extendingopening has a length through the conductive metal nitride-comprisingmaterial, the annealing been effective to only partially extendconductive metal nitride-comprising material along an entirety of thelength.
 52. The method of claim 22 wherein the laterally extendingopening has a length through the conductive metal nitride-comprisingmaterial, the annealing been effective to fully extend conductive metalnitride-comprising material along an entirety of the length.
 53. Themethod of claim 26 wherein the conductive metal nitride-comprisingmaterial within the trench comprises an opening extending laterallytherethrough to the insulative material received over the othercircuitry area prior to the annealing, the annealing being effective toclose-off the laterally extending opening.
 54. The method of claim 53wherein the laterally extending opening has a length through theconductive metal nitride-comprising material, the annealing beeneffective to only partially extend conductive metal nitride-comprisingmaterial along an entirety of the length.
 55. The method of claim 53wherein the laterally extending opening has a length through theconductive metal nitride-comprising material, the annealing beeneffective to fully extend conductive metal nitride-comprising materialalong an entirety of the length.
 56. The method of claim 32 wherein thelaterally extending opening has a length through the conductive metalnitride-comprising material, the annealing been effective to onlypartially extend conductive metal nitride-comprising material along anentirety of the length.
 57. The method of claim 32 wherein the laterallyextending opening has a length through the conductive metalnitride-comprising material, the annealing been effective to fullyextend conductive metal nitride-comprising material along an entirety ofthe length.
 58. A method of forming a plurality of capacitors,comprising: providing a substrate comprising a capacitor array area andanother circuitry area other than the capacitor array area, aninsulative material received over the capacitor array area and the othercircuitry area, the capacitor array area comprising a plurality ofcapacitor electrode openings within the insulative material receivedover individual capacitor storage node locations, the other circuitryarea comprising a sidewall of the insulative material; formingconductive metal nitride-comprising material within the capacitorelectrode openings within the capacitor array area and against at leasta portion of said sidewall of insulative material; annealing theconductive metal nitride-comprising material received against saidportion of said sidewall of insulative material in a nitrogen-comprisingatmosphere; after the annealing, etching the insulative material withinthe capacitor array area to expose outer sidewall portions of theconductive metal nitride-comprising material within the capacitor arrayarea; and after the etching, incorporating the conductive metalnitride-comprising material within the capacitor array into a pluralityof capacitors that comprise the conductive metal nitride-comprisingmaterial within the capacitor array, the capacitors comprising separateconductive capacitor electrodes that comprise the conductive metalnitride-comprising material and a ring of elemental metal received aboutan elevationally outer portion of the conductive metalnitride-comprising material.
 59. The method of claim 58 wherein themetal of the metal nitride-comprising material and the elemental metalare the same metal.
 60. The method of claim 59 wherein the metal istitanium.
 61. The method of claim 58 wherein the ring tapers inthickness laterally inward at an elevationally inner portion thereof.62. The method of claim 58 wherein the conductive metalnitride-comprising material of individual of the capacitor electrodesprojects laterally inward at an elevationally outer portion thereof. 63.The method of claim 62 wherein the ring tapers in thickness laterallyinward at an elevationally inner portion thereof.